Recent progress and critical issues in thin film polycrystalline solar cells and modules

RW Birkmire - Conference Record of the Twenty Sixth IEEE …, 1997 - ieeexplore.ieee.org
Thin film CdTe and CuInSe/sub 2/based solar cells have reported efficiencies of over 15%
and 17% respectively for small area laboratory devices and over 10% for prototype modules …

Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

O Blum, IJ Fritz, LR Dawson, AJ Howard… - Applied physics …, 1995 - pubs.aip.org
Surface normal optoelectronic devices operating at long wavelengths (≳ 1.3 μm), require
distributed Bragg reflectors (DBRs) with a practical number (≤ 50) of mirror layers. This …

Transverse-mode dynamics in vertical-cavity surface-emitting lasers excited by fast electrical pulses

O Buccafusca, JLA Chilla, JJ Rocca… - … of papers presented …, 1996 - ieeexplore.ieee.org
Summary form only given. With modulation bandwidth of 10-15 GHz, vertical-cavity surface-
emitting lasers (VCSELs) have become a suitable choice for optical interconnects. However …

Analytical solution of wave mixing between short optical pulses in a semiconductor optical amplifier

M Shtaif, G Eisenstein - Applied physics letters, 1995 - pubs.aip.org
An analytical solution to the problem of nondegenerate four wave mixing in a semiconductor
optical amplifier emphasizing operation with short optical pulses is described. Calculated …

Short pulse gain saturation in InGaAsP diode laser amplifiers

Y Lai, KL Hall, EP Ippen… - IEEE Photonics …, 1990 - ieeexplore.ieee.org
The saturation behavior of InGaAsP optical amplifiers is studied for input pulsewidths of 15
ps and 150 fs. The measured output saturation energies are 150 and 40 fJ, respectively. A …

Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

O Blum, MJ Hafich, JF Klem, KL Lear… - Applied physics …, 1995 - pubs.aip.org
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR)
grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity …

Optimization of four‐wave mixing conversion efficiency in the presence of nonlinear loss

AM Darwish, EP Ippen, HQ Le, JP Donnelly… - Applied physics …, 1996 - pubs.aip.org
We analyze the effect of nonlinear loss on four-wave mixing FWM conversion efficiency.
Maximum conversion efficiency is geometry independent and equal to e 2(3)/Im (3) 2 when …

Demonstration of ultrafast, all‐optical, low control energy, single wavelength, polarization independent, cascadable, and integratable switch

KI Kang, TG Chang, I Glesk, PR Prucnal… - Applied physics …, 1995 - pubs.aip.org
A new type of ultrafast all optical switch based on a Mach–Zehnder interferometer is
demonstrated with a 10 ps switching window which requires only 0.65 pJ of control pulse …

Ultrafast intensity switching and nonthermal carrier effects in semiconductor microcavity lasers

F Jahnke, SW Koch - Applied physics letters, 1995 - pubs.aip.org
During the last decade the problems of carrier transport and emission dynamics in
semiconductor lasers have been areas of active research. In this context the gain recovery …

Cavity enhancement of resonant frequencies in semiconductor lasers subject to optical injection

TB Simpson, JM Liu, KF Huang, K Tai, CM Clayton… - Physical Review A, 1995 - APS
The injection of an optical signal into a semiconductor laser biased near or above the lasing
threshold modifies the coupling between the free carriers and the intracavity field. The …