Recent progress and critical issues in thin film polycrystalline solar cells and modules
RW Birkmire - Conference Record of the Twenty Sixth IEEE …, 1997 - ieeexplore.ieee.org
Thin film CdTe and CuInSe/sub 2/based solar cells have reported efficiencies of over 15%
and 17% respectively for small area laboratory devices and over 10% for prototype modules …
and 17% respectively for small area laboratory devices and over 10% for prototype modules …
Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
O Blum, IJ Fritz, LR Dawson, AJ Howard… - Applied physics …, 1995 - pubs.aip.org
Surface normal optoelectronic devices operating at long wavelengths (≳ 1.3 μm), require
distributed Bragg reflectors (DBRs) with a practical number (≤ 50) of mirror layers. This …
distributed Bragg reflectors (DBRs) with a practical number (≤ 50) of mirror layers. This …
Transverse-mode dynamics in vertical-cavity surface-emitting lasers excited by fast electrical pulses
O Buccafusca, JLA Chilla, JJ Rocca… - … of papers presented …, 1996 - ieeexplore.ieee.org
Summary form only given. With modulation bandwidth of 10-15 GHz, vertical-cavity surface-
emitting lasers (VCSELs) have become a suitable choice for optical interconnects. However …
emitting lasers (VCSELs) have become a suitable choice for optical interconnects. However …
Analytical solution of wave mixing between short optical pulses in a semiconductor optical amplifier
M Shtaif, G Eisenstein - Applied physics letters, 1995 - pubs.aip.org
An analytical solution to the problem of nondegenerate four wave mixing in a semiconductor
optical amplifier emphasizing operation with short optical pulses is described. Calculated …
optical amplifier emphasizing operation with short optical pulses is described. Calculated …
Short pulse gain saturation in InGaAsP diode laser amplifiers
The saturation behavior of InGaAsP optical amplifiers is studied for input pulsewidths of 15
ps and 150 fs. The measured output saturation energies are 150 and 40 fJ, respectively. A …
ps and 150 fs. The measured output saturation energies are 150 and 40 fJ, respectively. A …
Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
O Blum, MJ Hafich, JF Klem, KL Lear… - Applied physics …, 1995 - pubs.aip.org
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR)
grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity …
grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity …
Optimization of four‐wave mixing conversion efficiency in the presence of nonlinear loss
AM Darwish, EP Ippen, HQ Le, JP Donnelly… - Applied physics …, 1996 - pubs.aip.org
We analyze the effect of nonlinear loss on four-wave mixing FWM conversion efficiency.
Maximum conversion efficiency is geometry independent and equal to e 2(3)/Im (3) 2 when …
Maximum conversion efficiency is geometry independent and equal to e 2(3)/Im (3) 2 when …
Demonstration of ultrafast, all‐optical, low control energy, single wavelength, polarization independent, cascadable, and integratable switch
KI Kang, TG Chang, I Glesk, PR Prucnal… - Applied physics …, 1995 - pubs.aip.org
A new type of ultrafast all optical switch based on a Mach–Zehnder interferometer is
demonstrated with a 10 ps switching window which requires only 0.65 pJ of control pulse …
demonstrated with a 10 ps switching window which requires only 0.65 pJ of control pulse …
Ultrafast intensity switching and nonthermal carrier effects in semiconductor microcavity lasers
During the last decade the problems of carrier transport and emission dynamics in
semiconductor lasers have been areas of active research. In this context the gain recovery …
semiconductor lasers have been areas of active research. In this context the gain recovery …
Cavity enhancement of resonant frequencies in semiconductor lasers subject to optical injection
TB Simpson, JM Liu, KF Huang, K Tai, CM Clayton… - Physical Review A, 1995 - APS
The injection of an optical signal into a semiconductor laser biased near or above the lasing
threshold modifies the coupling between the free carriers and the intracavity field. The …
threshold modifies the coupling between the free carriers and the intracavity field. The …