Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …

This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …

In this work, we have demonstrated highperformance lateral β-Ga 2 O 3 metal-oxide-
semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P …

Due to the emergence of electric vehicles, power electronics have become the new focal
point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC …

This letter reports-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 (AlGaO/GaO) heterostructure FETs (HFETs)
with significant improvement of peak transconductance (gm), current and power gain cutoff …

We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown β-Ga 2 O 3
thin films using silane as a precursor. The delta-doped β-Ga 2 O 3 epitaxial films are …

Abstract β-Ga2O3 is a promising material for next-generation power devices because of its
ultra-wide bandgap, the commercial availability of bulk substrates, epitaxial growth, and …