Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible
alternative to silicon for particles and photons detection. Its characteristics make it very …

The effects on 4H-silicon carbide epilayers of irradiation with protons and electrons having
particle energies, respectively, of 6.5 and 8.2 MeV were carefully studied and critically …

The latest advances in SiC X-ray detectors are presented: a pixel detector coupled to a
custom ultra low noise CMOS preamplifier has been characterized at room and high …

Low temperature annealing of electron irradiation-induced deep levels in 4 H-SiC is
reported. The major deep level transient spectroscopy peak S2 associated with the energy …

We report the results of an experimental study on the radiation hardness of 4H-SiC diodes
used as alpha-particle detectors with 1 MeV neutrons up to a fluence of 8times10 15 n/cm 2 …

Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied
thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky …

The relatively high value of the energy required to produce an electron-hole pair in silicon
carbide, SiC, by a minimum ionizing particle (MIP) against the value for Si, imposes severe …

We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the
radiation emitted by laser generated plasmas. The detector has been employed in time of …