2D materials in flexible electronics: recent advances and future prospectives

AK Katiyar, AT Hoang, D Xu, J Hong, BJ Kim… - Chemical …, 2023 - ACS Publications
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Emerging 2D metal oxides: from synthesis to device integration

K Zhou, G Shang, HH Hsu, ST Han… - Advanced …, 2023 - Wiley Online Library
Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

M Wu, Y Xiao, Y Zeng, Y Zhou, X Zeng, L Zhang… - InfoMat, 2021 - Wiley Online Library
Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D)
transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to …

Recent advances in ambipolar transistors for functional applications

Y Ren, X Yang, L Zhou, JY Mao… - Advanced Functional …, 2019 - Wiley Online Library
Ambipolar transistors represent a class of transistors where positive (holes) and negative
(electrons) charge carriers both can transport concurrently within the semiconducting …

Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides

T Ahmed, J Zha, KKH Lin, HC Kuo, C Tan… - Advanced …, 2023 - Wiley Online Library
Abstract 2D monolayer transition metal dichalcogenides (TMDCs) show great promise for
the development of next‐generation light‐emitting devices owing to their unique electronic …

Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Y Kim, WJ Woo, D Kim, S Lee, S Chung… - Advanced …, 2021 - Wiley Online Library
Transition metal chalcogenides (TMCs) are a large family of 2D materials with different
properties, and are promising candidates for a wide range of applications such as …

Extending Schottky–Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles

WY Chen, L Li, T Huang, ZX Yang, T Zhang… - Applied Physics …, 2023 - pubs.aip.org
The Schottky–Mott (S–M) limit based on the S–M rule is often used to evaluate the Schottky
barrier height (SBH) at metal–semiconductor (MS) van der Waals (vdW) contacts but fails at …

Low‐power complementary inverter with negative capacitance 2D semiconductor transistors

J Wang, X Guo, Z Yu, Z Ma, Y Liu, Z Lin… - Advanced Functional …, 2020 - Wiley Online Library
A fundamental limit for the supply voltage of conventional field‐effect transistors is the long
high‐energy tail of the Boltzmann distribution of the carrier population at the source junction …

Emerging opportunities for electrostatic control in atomically thin devices

ME Beck, MC Hersam - ACS nano, 2020 - ACS Publications
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET),
which is among the most ubiquitous devices in the modern world. As transistors and related …

Ambipolar 2D semiconductors and emerging device applications

W Hu, Z Sheng, X Hou, H Chen, Z Zhang… - Small …, 2021 - Wiley Online Library
With the rise of 2D materials, new physics and new processing techniques have emerged,
triggering possibilities for the innovation of electronic and optoelectronic devices. Among …