Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p+-Si Schottky Photovoltaic Device
In the present study, effect of annealing in Al/nanostructured porous silicon multilayer (PS-
ML): p+-Si Schottky photovoltaic device is observed for the behavioural change in its pyro …
ML): p+-Si Schottky photovoltaic device is observed for the behavioural change in its pyro …
Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D
MK Omar, M Rashid, MZ Pakhuruddin - Physica Scripta, 2024 - iopscience.iop.org
Indium gallium nitride (InGaN) thin-film solar cell is a promising photovoltaic (PV) device.
InGaN's bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient …
InGaN's bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient …
Structural and Mechanical Aspects of Nanocomposite Hard Thin Films for Device Fabrication at Nanoscale
The dimension, efficiency, and cost of N/MEMS-based devices are continuously been
looked into for better performance [1–4]. Amongst these devices, piezoresistive pressure …
looked into for better performance [1–4]. Amongst these devices, piezoresistive pressure …
Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device
In the present study, effect of annealing in Al/nanostructured PS-ML: p+-Si Schottky
photovoltaic device is observed for the behavioural change in its pyro-phototronic and …
photovoltaic device is observed for the behavioural change in its pyro-phototronic and …
Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence
NS Khairuddin, MZM Yusoff… - International …, 2024 - ejournal.unimap.edu.my
The current research project intends to enhance solar cells' power and conversion efficiency
based on InN/p-Si utilizing the PC1D simulator. A broad direct bandgap of Indium nitride …
based on InN/p-Si utilizing the PC1D simulator. A broad direct bandgap of Indium nitride …