Quantum dot as a spin-current diode: A master-equation approach

FM Souza, JC Egues, AP Jauho - Physical Review B—Condensed Matter and …, 2007 - APS
We report a study of spin-dependent transport in a system composed of a quantum dot
coupled to a normal metal lead and a ferromagnetic lead (NM-QD-FM). We use the master …

Chapter One Spin-Dependent Tunneling in Magnetic Junctions

HJM Swagten - Handbook of Magnetic Materials, 2007 - Elsevier
This chapter reviews the physics of spin-dependent tunneling in magnetic tunnel junctions,
ie ferromagnetic layers separated by an ultrathin, insulating barrier. In magnetic junctions …

Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devices

S Sakai, M Kawano, M Ikawa, H Sato… - Semiconductor …, 2017 - iopscience.iop.org
We develop a low-temperature growth technique of epitaxial Ge layers on a body-centered-
cubic ferromagnetic metal (bcc-FM), Fe 3 Si, by combining solid phase epitaxy (SPE) and …

Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

Z Yang, Q Zhan, X Zhu, Y Liu, H Yang, B Hu… - Europhysics …, 2014 - iopscience.iop.org
We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe
sandwich structures can be employed to produce a nanoscale magnetic tunnel junction …

Temperature dependence of resistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions

QL Ma, SG Wang, J Zhang, Y Wang, RCC Ward… - Applied Physics …, 2009 - pubs.aip.org
The temperature dependence of resistance in parallel (P) and antiparallel (AP)
configurations (RP, AP) has been investigated in epitaxial Fe/MgO/Fe junctions with varying …

Oscillations of tunneling magnetoresistance on bias voltage in magnetic tunnel junctions with periodic grating barrier

H Fang, X Zang, M Xiao, Y Zhong, Z Tao - Journal of Applied Physics, 2020 - pubs.aip.org
A spintronic theory is developed to describe the effect of bias voltages on the magnetic
tunnel junctions (MTJs) with a single-crystal barrier. The theory is founded on a conventional …

Spectroscopic Measurement of Spin-dependent Resonant Tunneling through a 3D Disorder: <?format ?>The Case of Junctions

V Garcia, H Jaffrès, JM George, M Marangolo… - Physical review …, 2006 - APS
We propose an analytical model of spin-dependent resonant tunneling through a 3D
assembly of localized states (spread out in energy and in space) in a barrier. An …

All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

M Kawano, M Ikawa, K Arima, S Yamada… - Journal of Applied …, 2016 - pubs.aip.org
We demonstrate low-temperature growth of all-epitaxial Co 2 FeSi/Ge/Co 2 FeSi trilayer
structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) …

Interface bonding of a ferromagnetic/semiconductor junction: A photoemission study of

M Eddrief, M Marangolo, VH Etgens, S Ustaze… - Physical Review B …, 2006 - APS
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a
combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction …

Transient charging and discharging of spin-polarized electrons in a quantum dot

FM Souza, SA Leao, RM Gester, AP Jauho - Physical Review B—Condensed …, 2007 - APS
We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic
leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents …