Low-power electronic technologies for harsh radiation environments

J Prinzie, FM Simanjuntak, P Leroux… - Nature Electronics, 2021 - nature.com
Electronic technologies that can operate in harsh radiation environments are important in
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …

An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools

Q Huang, J Jiang - Progress in Nuclear Energy, 2019 - Elsevier
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …

Radiation effects in a post-Moore world

DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Fidelity: Efficient resilience analysis framework for deep learning accelerators

Y He, P Balaprakash, Y Li - 2020 53rd Annual IEEE/ACM …, 2020 - ieeexplore.ieee.org
We present a resilience analysis framework, called FIdelity, to accurately and quickly
analyze the behavior of hardware errors in deep learning accelerators. Our framework …

How reduced data precision and degree of parallelism impact the reliability of convolutional neural networks on FPGAs

F Libano, P Rech, B Neuman, J Leavitt… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Convolutional neural networks (CNNs) are becoming attractive alternatives to traditional
image-processing algorithms in self-driving vehicles for automotive, military, and aerospace …

Single-event transient in FinFETs and nanosheet FETs

J Kim, JS Lee, JW Han… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
A single-event transient (SET) due to alpha particle strike is studied in 11-and 6-nm-bulk
FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation. The nanosheet device …

Design and analysis of gate stack silicon-on-insulator nanosheet FET for low power applications

R Yuvaraj, A Karuppannan, AK Panigrahy, R Swain - Silicon, 2023 - Springer
Since the introduction of fast integrated circuits, semiconductor manufacturers have
concentrated their efforts on reducing the size of transistors. Increased working frequencies …

Analysis of bulk FinFET structural effects on single-event cross sections

P Nsengiyumva, LW Massengill… - … on Nuclear Science, 2016 - ieeexplore.ieee.org
A set of upset criteria based on circuit characteristic switching time frame is developed and
used to bridge transistor-level TCAD simulations to circuit-level single-event (SE) upset …

A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS

S Azimi, C De Sio, A Portaluri, D Rizzieri… - Microelectronics …, 2022 - Elsevier
This work describes a comparative radiation reliability analysis between two reconfigurable
devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET …

Impact of microarchitectural differences of RISC-V processor cores on soft error effects

H Cho - IEEE Access, 2018 - ieeexplore.ieee.org
In this paper, we compare how radiation-induced soft errors affect the execution results of
user-level applications on different processor cores that implement the same instruction set …