The review article describes the interplay of fundamental research and advanced processes
that have made SiC a unique semiconductor material for power electronic devices. Related …

Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

Using a structural search method in combination with first-principles calculations, we found
lots of low energy 2D carbon allotropes and examined all possible Dirac points around their …

In recent years, new types of semiconductor heterostructures consisting of only one material
in different crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic …

Single crystal 4H and 6H polytypes of SiC have been deformed in compression at 1300° C.
All the deformation-induced dislocations were found to be dissociated into two partials …

Results of ab initio calculations are reported for hexagonal polytypes of C, Si, and Ge in
equilibrium and under hydrostatic pressure. For each polytype 2 H, 3 C, 4 H, and 6 H, the …

First principles calculations of the stacking fault (SF) in 4H–SiC indicate the occurrence of an
interface band in the gap with maximum depth of 0.2–0.3 eV below the conduction band …

A major problem with most of the present nuclear reactors is their safety in terms of the
release of radioactivity into the environment during accidents. In some of the future nuclear …

SiC is essential for next-generation semiconductors and nuclear plant components. Its
performance is strongly influenced by its thermal conductivity, which is highly sensitive to its …