One-dimensional compound semiconductor nanolasers, especially nanowire (NW)-based
nanolasers utilizing III-nitride (AlGaInN) materials system, are an emerging and promising …

Semiconductor nanolasers represent the current frontier of research in the confluencing
area of nanotechnology (or nanophotonics) and semiconductor lasers. In this paper, we …

An electrically controlled optical absorption is numerically proposed in a plasmonic
waveguide on silicon-on-insulator (SOI) consisting of copper-indium tin oxide (ITO) based …

The fabrication processes of high-speed oxide-confined single-mode (SM)-vertical-cavity
surface-emitting lasers (VCSELs) are complex, costly, and often held back by reliability and …

Nanolasers operate with a minimal amount of active material and low losses. In this regime,
single layers of transition-metal dichalcogenides (TMDs) are being investigated as next …

Photonic amplifiers and lasers require optical gain to be extracted from a medium. To
optimize this process, the confinement factor (Γ) connects the actual gain experienced by an …

It is known that the conventional bulk semiconductor optical amplifier (SOA) faces the
problem of the slow gain recovery time, which limits its application as a nonlinear element at …

The interface polarization effect of the electron blocking layer (EBL) hinders the hole
transmission efficiency, and the traditional EBL cannot effectively suppress the electron …

HgCdTe is promising as a material to solve a problem of the development of semiconductor
sources with an operational frequency range of 6–10 THz due to the small optical phonon …

The concept of confinement factor (CF) is analyzed for a metal-semiconductor-metal (MSM)
waveguide near the surface plasmon resonance. We show that the CF is inversely …