This work realises a hetero‐dielectric buried oxide vertical tunnel field effect transistor (HDB
VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the …

This paper presents a novel design of Vertical Tunnel Field Effect Transistor (VTFET) using
work-function engineering. In this work, we investigate the impact of work-function …

Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an
inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its …

It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than
the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the …

Junctionless tunneling field-effect transistor (JL-TFET) is an excellent potential alternative to
conventional MOSFET and TFET due to the lack of a steep doping profile, which makes it …

A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed
and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the …

The field of integrated circuits (ICs) has come a long way in the last several decades. The
scaling of complementary metal-oxide-semiconductor (CMOS) transistors has enabled …

In recent low-power electronics industry, Tunnel field-effect transistors (TFETs) have shown
the superior performance such as decreased leakage current and lower subthreshold slope …

Integrated circuits have undergone significant development over the past several decades.
Because of the increased density of transistors in CMOS devices, faster, more efficient, and …

Low-power electronics utilize the least amount of energy possible to perform their intended
function. Power management, energy-efficient design, and alternative energy sources help …