Extracting long-lasting performance from electronic devices and improving their reliability
through effective heat management requires good thermal conductors. Taking both three …

The interconnect half‐pitch size will reach≈ 20 nm in the coming sub‐5 nm technology
node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be> 4 nm to ensure …

Copper nanowires are widely used as on-chip interconnects due to their superior
conductivity. However, with aggressive Cu interconnect scaling, surface scattering of …

Abstract Thin Copper (Cu) films (15 nm) are deposited on different 2D material surfaces
through e-beam deposition. With the assist of van der Waals epitaxy growth mode on 2D …

A TaN x layer was deposited as a barrier between Cu and a p-type Si-based substrate.
Various N 2 flow rates were used during deposition along with a fixed Radio Frequency (RF) …

Accurate modeling of interconnect conductivity is important for performance evaluation of
chips in advanced technologies. Surface scattering in interconnects is usually treated by …

Interconnect conductivity modeling is a critical aspect for modern chip design. Surface
scattering--an important scattering mechanism in scaled interconnects is usually captured …

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for
Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point …

The continued downscaling of transistors limits the available space for Cu interconnects in
integrated circuits. The electrical conductivity of interconnects is further constrained by the …

Abstract The effects of Ar Plasma Treatment (APT) on the properties of Ta ie the
transformation from high resistivity β-Ta to low resistivity α-Ta are manifested in this work. It …