In this work, the device characteristics of GaN-based high-electron-mobility transistors
(HEMTs) were systematically investigated by the direct current (DC) and low-frequency …

Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

Cryogenic low-noise amplifiers based on high electron mobility transistors (HEMTs) are
widely used in applications such as radio astronomy, deep space communications, and …

By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …

The influence of thermal effects in AlGaN/GaN HEMTs is studied by means of Monte Carlo
simulations. Measured output and transfer characteristics of a transistor are well reproduced …

The existence of leakage current pathways leading to the appearance of impact ionization
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …

This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

Electronic noise, or stochasticity in the current, voltage, and frequency of a carrier signal is
caused by microscopic fluctuations in the occupation of quantum electronic states. In the …

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is
systematically investigated by the direct current (DC) and low-frequency noise (LFN) …

In this study, the performance of a doped-GaN-based planar Gunn diode (PGD) with a T-
shape channel is investigated through numerical simulations. The effects of the vertical …