Epitaxial pin structures grown on native GaN substrates have been fabricated and used to
extract the impact ionization coefficients in GaN. The photomultiplication method has been …

We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes
are of emerging interest to the device community. The review covers various important …

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive
material for high-performance solar-blind ultraviolet (UV)(220–280 nm) detectors, which are …

Abstract 4H-SiC single photon counting avalanche photodiodes (SPADs) are prior devices
for weak ultraviolet (UV) signal detection with the advantages of small size, low leakage …

We review Ill-Nitride optoelectronic device technologies with an emphasis on recent
breakthroughs. We start with a brief summary of historical accomplishments and then report …

This paper is dedicated to discussing the physics and applications of avalanche on III-
Nitrides, primarily using Gallium Nitride as the example. Understanding the breakdown …

We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN
substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire …

This paper presents a demonstration of a 278 V GaN avalanche photodiode offering a
photoresponsivity of 60 A/W and capable of operating at high temperature with a high gain …

We present improved AlGaN solar-blind avalanche photodiodes (APDs) with a separate
absorption and multiplication (SAM) structure by introducing a polarization electric field with …

GaN pin ultraviolet avalanche photodiodes (UV-APDs) were fabricated from epitaxial
structures grown on low-dislocation-density free-standing GaN substrates to form 4× 4 UV …