Surface‐mediated construction of an ultrathin free‐standing covalent organic framework membrane for efficient proton conduction

L Liu, L Yin, D Cheng, S Zhao, HY Zang… - Angewandte …, 2021 - Wiley Online Library
As a new class of crystalline porous organic materials, covalent organic frameworks (COFs)
have attracted considerable attention for proton conduction owing to their regular channels …

Printed carbon nanotube thin film transistors based on perhydropolysilazane-derived dielectrics for low power flexible electronics

X Li, X Wang, J Deng, M Li, S Shao, J Zhao - Carbon, 2022 - Elsevier
Electric double layer (EDL) electrolyte dielectrics have attracted great interest for low voltage
and low power consumption portable thin film transistor (TFT) devices and circuits due to …

Rapid conversion of perhydropolysilazane into thin silica coating at low temperature

WY Wang, YL Zhang, X Guo, LM Wang… - Chinese Journal of …, 2023 - Springer
The conversion of perhydropolysilazane (PHPS) to silica at low temperature is beneficial for
its application on thermally vulnerable substrates. In this work, it is demonstrated that (3 …

Flexible hard coatings with self-evolution behavior in a low earth orbit environment

D Wang, J Ma, P Li, L Fan, Y Wu, Z Zhang… - … Applied Materials & …, 2021 - ACS Publications
Lightweight, long lifetime, and flexible polymer membrane-based structures, which are
tightly folded on the ground and then unfolded in space, suffer from repeated bending before …

Synthesis of Aminosilane Chemical Vapor Deposition Precursors and Polycarbosilazanes through Manganese-Catalyzed Si–N Dehydrocoupling

TT Nguyen, TK Mukhopadhyay… - ACS Sustainable …, 2022 - ACS Publications
Compounds that feature Si–N bonds are of widespread importance to the electronics and
coating industries. Aminosilanes and polysilazanes are currently prepared by adding …

Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits

S Kim, H Yoo - Micromachines, 2022 - mdpi.com
Thin-film transistors have been extensively developed due to their process merit: high
compatibility with various substrates, large-area processes, and low-cost processes. Despite …

Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor

P Li, Y Zhang, Y Guo, L Jiang, Z Zhang… - The Journal of Physical …, 2021 - ACS Publications
SiO x is an important dielectric material layer for resistive switching memory due to its
compatibility with complementary metal-oxide semiconductor (CMOS) technology. Here we …

Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

P Li, D Wang, Z Zhang, Y Guo, L Jiang… - ACS Applied Materials & …, 2020 - ACS Publications
Due to its high versatility and cost-effectiveness, solution process has a remarkable
advantage over physical or chemical vapor deposition (PVD/CVD) methods in developing …

Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters

SJ Park, TJ Ha - Journal of Alloys and Compounds, 2022 - Elsevier
High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium
dioxide (ZrO 2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were …

Present status of electric-double-layer thin-film transistors and their applications

W Cai, J Wilson, A Song - Flexible and Printed Electronics, 2021 - iopscience.iop.org
As thin-film transistors (TFTs) are the workhorse of thin-film electronics, a great deal of focus
has been placed upon improving their performance. One major avenue of investigation is …