Electronic Transport and Quantum Phenomena in Nanowires

G Badawy, EPAM Bakkers - Chemical Reviews, 2024 - ACS Publications
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Nanoscale phenomena in oxide heterostructures

JA Sulpizio, S Ilani, P Irvin, J Levy - Annual Review of Materials …, 2014 - annualreviews.org
Recent advances in creating complex oxide heterostructures, interfaces formed between two
different transition-metal oxides, have heralded a new era of materials and physics research …

Solution-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors

M Amani, C Tan, G Zhang, C Zhao, J Bullock, X Song… - ACS …, 2018 - ACS Publications
Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated
themselves to be excellent candidates for high-performance infrared photodetectors and …

Hard gap in epitaxial semiconductor–superconductor nanowires

W Chang, SM Albrecht, TS Jespersen… - Nature …, 2015 - nature.com
Many present and future applications of superconductivity would benefit from electrostatic
control of carrier density and tunnelling rates, the hallmark of semiconductor devices. One …

[PDF][PDF] 3D Arrays of 1024‐pixel image sensors based on lead halide perovskite nanowires

L Gu, MM Tavakoli, D Zhang, Q Zhang… - Advanced …, 2016 - bislab.sjtu.edu.cn
DOI: 10.1002/adma. 201601603 of controllability over geometry, ie, diameter and length,
has yet been reported [21, 22] and it urgently needed for fundamental investigations of the …

[图书][B] Fundamentals of tunnel field-effect transistors

S Saurabh, MJ Kumar - 2016 - taylorfrancis.com
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Single InAs nanowire room-temperature near-infrared photodetectors

J Miao, W Hu, N Guo, Z Lu, X Zou, L Liao, S Shi… - ACS …, 2014 - ACS Publications
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection
wavelength up to∼ 1.5 μm. The single InAs NW photodetectors displayed minimum …

High electron mobility in strained GaAs nanowires

L Balaghi, S Shan, I Fotev, F Moebus, R Rana… - Nature …, 2021 - nature.com
Transistor concepts based on semiconductor nanowires promise high performance, lower
energy consumption and better integrability in various platforms in nanoscale dimensions …

Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire

H Fang, W Hu, P Wang, N Guo, W Luo, D Zheng… - Nano …, 2016 - ACS Publications
One-dimensional InAs nanowires (NWs) have been widely researched in recent years.
Features of high mobility and narrow bandgap reveal its great potential of optoelectronic …

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

J Ai, M Qin, M Xue, C Cao, J Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …