Sensor applications based on AlGaN/GaN heterostructures
KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …
albeit new, is well-established material system in the fields of high power, high temperature …
A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based …
In this paper, we focus on recent advances of the high-electron-mobility transistor (HEMT)-
based biosensors for the detection of various biomolecules. The vital utilization of …
based biosensors for the detection of various biomolecules. The vital utilization of …
Liquid metal based theranostic nanoplatforms: Application in cancer therapy, imaging and biosensing
Liquid metals in recent years have grabbed the attention of researchers due to their
expanded applicability not only in the field of therapeutics but also in theranostic …
expanded applicability not only in the field of therapeutics but also in theranostic …
Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor
K Woo, W Kang, K Lee, P Lee, Y Kim, TS Yoon… - Biosensors and …, 2020 - Elsevier
In this study, high electron mobility transistor (HEMT) device was used as an immuno
biosensor to measure concentration of a stress hormone, cortisol, by using selective binding …
biosensor to measure concentration of a stress hormone, cortisol, by using selective binding …
Sensory analysis of hepatitis B virus DNA for medicinal clinical diagnostics based on molybdenum doped ZnO nanowires field effect transistor biosensor; a …
In this paper, a bio-sensing setup for investigating hepatitis B virus deoxyribonucleic acid
(HBV DNA) diagnosis including rapid testing and field effect transistor (FET) in label free …
(HBV DNA) diagnosis including rapid testing and field effect transistor (FET) in label free …
Ovarian-cancer biomarker (HE4) recognition in serum using hetero TFET biosensor
A Bhattacharyya, D De… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Recognition of ovarian-cancer biomarker (HE4) in serum using dual-material In 0.53 Ga
0.47 As/Si hetero-structure charge-plasma-based extended gate TFET biosensor (DCE …
0.47 As/Si hetero-structure charge-plasma-based extended gate TFET biosensor (DCE …
AlGaN/GaN high electron mobility transistor for various sensing applications: a review
AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …
desired for sensing regime applications due to their extraordinary chemical stability, non …
Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions
This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization
In this work, a physics based analytical model has been proposed for an open gate
AlGaN/GaN HEMT for electrical detection of biomolecules-uricase, glucose, biotin and …
AlGaN/GaN HEMT for electrical detection of biomolecules-uricase, glucose, biotin and …
Enhancement of sensitivity in AlGaN/GaN HEMT based sensor using back-barrier technique
In the state of the art, most of the Gallium Nitride (GaN) High Electron Mobility Transistor
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …