Sensor applications based on AlGaN/GaN heterostructures

KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …

A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based …

V Hemaja, DK Panda - Silicon, 2022 - Springer
In this paper, we focus on recent advances of the high-electron-mobility transistor (HEMT)-
based biosensors for the detection of various biomolecules. The vital utilization of …

Liquid metal based theranostic nanoplatforms: Application in cancer therapy, imaging and biosensing

S Kulkarni, A Pandey, S Mutalik - Nanomedicine: Nanotechnology, Biology …, 2020 - Elsevier
Liquid metals in recent years have grabbed the attention of researchers due to their
expanded applicability not only in the field of therapeutics but also in theranostic …

Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor

K Woo, W Kang, K Lee, P Lee, Y Kim, TS Yoon… - Biosensors and …, 2020 - Elsevier
In this study, high electron mobility transistor (HEMT) device was used as an immuno
biosensor to measure concentration of a stress hormone, cortisol, by using selective binding …

Sensory analysis of hepatitis B virus DNA for medicinal clinical diagnostics based on molybdenum doped ZnO nanowires field effect transistor biosensor; a …

M Shariati, M Sadeghi, SHR Shojaei - Analytica Chimica Acta, 2022 - Elsevier
In this paper, a bio-sensing setup for investigating hepatitis B virus deoxyribonucleic acid
(HBV DNA) diagnosis including rapid testing and field effect transistor (FET) in label free …

Ovarian-cancer biomarker (HE4) recognition in serum using hetero TFET biosensor

A Bhattacharyya, D De… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Recognition of ovarian-cancer biomarker (HE4) in serum using dual-material In 0.53 Ga
0.47 As/Si hetero-structure charge-plasma-based extended gate TFET biosensor (DCE …

AlGaN/GaN high electron mobility transistor for various sensing applications: a review

AM Bhat, R Poonia, A Varghese, N Shafi… - Micro and …, 2023 - Elsevier
AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …

Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions

A Kumar, S Paliwal, D Kalra, A Varghese… - Materials Science in …, 2024 - Elsevier
This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …

Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization

P Pal, Y Pratap, M Gupta, S Kabra - Superlattices and Microstructures, 2021 - Elsevier
In this work, a physics based analytical model has been proposed for an open gate
AlGaN/GaN HEMT for electrical detection of biomolecules-uricase, glucose, biotin and …

Enhancement of sensitivity in AlGaN/GaN HEMT based sensor using back-barrier technique

A Jarndal, L Arivazhagan, E Almajali… - IEEE Sensors …, 2022 - ieeexplore.ieee.org
In the state of the art, most of the Gallium Nitride (GaN) High Electron Mobility Transistor
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …