This work provides a ground for a quantitative interpretation of experiments on step
bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier …

Bunching and meandering instability of steps at the 4H-SiC (0001) surface is studied by the
kinetic Monte Carlo simulation method. Change in the character of step instability is …

Different patterns can be created on the surface of growing crystals, among which the step
bunches and/or step meanders are two of the most studied. The Ehrlich–Schwoebel effect at …

Quantum dot (QD) growth on high ($ c_ {3v} $) symmetry GaAs {111} surfaces holds promise
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …

The formation and evolution of step bunching during step-flow growth of 6H-SiC (0001)
surfaces were studied by three-dimensional kinetic Monte Carlo (KMC) method and …

Stepped morphologies on vicinal 3C-and 4H-SiC (0001) surfaces with the miscut toward [1
1¯ 00] or [11 2¯ 0] directions have been studied with a three-dimensional kinetic Monte …

A stochastic simulation method designed to study at an atomic resolution the growth kinetics
of compounds characterized by the sp3‐type bonding symmetry is presented. Formalization …

The effect of step–step exclusion on growing vicinal surfaces destabilized by a step-up (SU)
or step-down (SD) driving force is extensively studied in diffusion-limited (DL) and kinetics …

Understanding and predicting quantum dots ordering is a central problem for many physical
processes. Here, we investigate the mechanisms which govern the self-assembling of Ge …

Stepped GaN (0001) surface is studied by the kinetic Monte Carlo method and compared
with the model based on Burton-Cabrera-Frank equations. Successive stages of surface …