The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

III/V semiconductor alloys have been extensively studied because of their usefulness for
electronic and photonic devices. Nevertheless, the search for new alloys for specific …

Alkylboranes, such as trimethylboron (TMB) and triethylboron (TEB), are promising
alternative precursors in low-temperature chemical vapor deposition (CVD) of boron …

Abstract The 2, 6‐diisopropylphenyl (Dipp) substituent is introduced to diaryl bismuth
chemistry. Dipp2BiBr (1‐Br) was prepared by a Grignard reaction and subsequently used as …

Herein we present the synthesis and characterization of di-tertiary butyl substituted (pseudo-
) halogen bismuthanes tBu2BiX (X= Cl (1), Br (2), I (3), CN (4), N3 (5), SCN (6)). These …

The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …

III/V semiconductors containing small amounts of Nitrogen (N) are very interesting for a
variety of optoelectronic applications. Unfortunately, the conventionally used N precursor 1 …

This is a report on the first setup of a recently developed, extremely sensitive and very fast
3D quadrupole ion trap mass spectrometer inline in a metalorganic vapour phase epitaxy …

The first molecular compound with all five pnictogens was obtained by a multi‐step reaction.
Lithiation of the (bisamido) diazadiarsetidine (tBuNAs) 2 (tBuNH) 2 in aliphatic solvents …

In this paper, the syntheses of antimony and nitrogen containing interpnictogen compounds
are described. Using tBu2SbCl as reagent, a tert‐butyl‐substituted stibano amine tBu2SbN …