The single-event transient (SET) produced by laser irradiation in a bulk FinFET is found to
have a large plateau current in the tail. Three-dimensional technology computer-aided …

In this paper, the temperature dependence of single event upset (SEU) cross-section in 28
nm embedded Static Random Access Memory (SRAM) of System in Package (SiP) was …

Integrated circuits are expected to operate across a wide range of temperatures and supply
voltages. At the 7-nm FinFET technology node, the self-heating of individual transistors may …

Single-port (SP) and two-port (TP) static random access memory (SRAM) arrays in a
commercial 5-nm FinFET technology were exposed to alpha particles at ambient and …

With the continuous scaling down of the Integrated Circuits process, the issue of single-
event transient in FinFET technology has become increasingly crucial. In this study, 3D …

With the continuous development of the IC industry, planar MOSFET technology has
reached its limits, especially at the 16nm and below process nodes. FinFET technology has …

While supply voltage and frequency directly affect circuit soft errors, thermal response from
tuning these two parameters also provides a moderate side effect. This study firstly improves …

Single event (SE) effects and total ionizing dose (TID) radiation for the 7-nm bulk FinFET
technology node are investigated. SE cross-sections are investigated at near-threshold …

Technology scaling has increased the density of logic gates impacted by particle strikes,
which affects the reliability of digital designs. Also, the impact of process, voltage, and …