AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …

An analytical model of nanogap embedded Gallium Nitride Gate-Material and Dielectric
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …

This paper introduces a novel device called the Gate All Around Engineered Gallium Nitride
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …

This paper proposes an analytical model for a dual gate AlGaN/GaN Metal oxide
semiconductor-high-electron-mobility transistor (MOS-HEMT) biosensor for electrical …

Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …

The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …

Abstract In this work AlGaN/AlN/GaN MOS-HEMTs based biosensors have been proposed
and simulated for the rapid test and ultrasensitive detection of various viruses. The proposed …

The effect of InGaN notch on sensitivity and Dielectric Modulated (DM) Double
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …

This paper presents an analytical framework, based on the surface potential for a
symmetrical double-gate AlGaN/GaN Metal oxide semiconductor high electron mobility …

In this research, a surface potential-based drain current model for an AlGaN/GaN
symmetrical double-gate metal oxide semiconductor high electron mobility transistor (DG …