AlGaN/GaN high electron mobility transistor for various sensing applications: a review
AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …
desired for sensing regime applications due to their extraordinary chemical stability, non …
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered-Schottky nano-wire fet (GaN-GME-DE-SNW-fet) based label …
An analytical model of nanogap embedded Gallium Nitride Gate-Material and Dielectric
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …
Dielectrically-modulated GANFET biosensor for label-free detection of DNA and avian influenza virus: proposal and modeling
S Yadav, A Das, S Rewari - ECS Journal of Solid State Science …, 2024 - iopscience.iop.org
This paper introduces a novel device called the Gate All Around Engineered Gallium Nitride
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …
Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model
R Mann, S Rewari, S Sharma… - … Science and Technology, 2023 - iopscience.iop.org
This paper proposes an analytical model for a dual gate AlGaN/GaN Metal oxide
semiconductor-high-electron-mobility transistor (MOS-HEMT) biosensor for electrical …
semiconductor-high-electron-mobility transistor (MOS-HEMT) biosensor for electrical …
Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors
Y Liu, Y Ma, H Guo, S Fu, Y Liu, G Wei… - Journal of Physics D …, 2023 - iopscience.iop.org
The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
Performance evaluation of electrical properties of GaN MOS-HEMTs based biosensors for rapid detection of viruses
F Mouffoki, D Bouguenna, FZ Dahou, A Beloufa… - Materials Today …, 2022 - Elsevier
Abstract In this work AlGaN/AlN/GaN MOS-HEMTs based biosensors have been proposed
and simulated for the rapid test and ultrasensitive detection of various viruses. The proposed …
and simulated for the rapid test and ultrasensitive detection of various viruses. The proposed …
Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing
The effect of InGaN notch on sensitivity and Dielectric Modulated (DM) Double
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
Threshold and surface potential-based sensitivity analysis of symmetrical double gate AlGaN/GaN MOS-HEMT including capacitance effects for label-free biosensing
P Sriramani, N Mohankumar, Y Prasamsha… - Physica …, 2023 - iopscience.iop.org
This paper presents an analytical framework, based on the surface potential for a
symmetrical double-gate AlGaN/GaN Metal oxide semiconductor high electron mobility …
symmetrical double-gate AlGaN/GaN Metal oxide semiconductor high electron mobility …
Drain current sensitivity analysis using a surface potential-based analytical model for AlGaN/GaN double gate MOS-HEMT
P Sriramani, N Mohankumar, Y Prasamsha - Micro and Nanostructures, 2024 - Elsevier
In this research, a surface potential-based drain current model for an AlGaN/GaN
symmetrical double-gate metal oxide semiconductor high electron mobility transistor (DG …
symmetrical double-gate metal oxide semiconductor high electron mobility transistor (DG …