Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …

In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …

This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …

Abstract A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET)
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …

In this article, the analog/RF performance of n-channel vertically stacked gate all around
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …

The ultra thin body double gate FE layer TFET (UTB-DG-FE-TFET) is proposed and
investigated in this work. Electrical performance parameters such as surface potential ψ (x) …

In this manuscript, a dual-drain Vertical Tunnel FET structure is proposed and investigated
for the first time. The simulation outcomes clearly manifest that reduction in channel …

The optimization of device dimensions along with high-k gate dielectric is investigated in this
work for improving RF/analog performance of double gate (DG) TFET device. Through …

To meet the scaling targets and continue with Moore's Law, the transition from FinFET to
Gate-All-Around (GAA) nanosheet Field Effect Transistors (FETs) is the necessity for low …

Abstract Vertically stacked Nanosheet Field Effect Transistor (NSFET) is considered the most
promising substitution for FinFET. In order to prevent making metallurgical junctions, based …