GaN is an important III–V semiconductor for a variety of applications owing to its large direct
band gap. GaN nanowires (NWs) have demonstrated significant potential as critical building …

Among III-nitride semiconductors, hexagonal boron nitride (h-BN) has a two-dimensional
crystal structure and can be used as an insulator for nanotransistors or a substrate release …

We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted
molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N 2 flow rate on …

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-
mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride …

Artificial intelligence (AI) technologies are accelerating the rapid innovations of
multifunctional micro/nanosystems for boosting significant applications in flexible …

ZnO is a very important material for excitonic ultraviolet optoelectronic devices operating
above room temperature due to its wide band gap and high exciton binding energy. In this …

We examine exciton recombination, energy-, and charge transfer in multilayer CdS/ZnS
quantum dots (QDs) on silver plasmonic resonators using photoluminescence (PL) and …

GaN epilayers are globally grown on amorphous glass substrates via a compound buffer
layer including Ti pre-orienting layer and AlN nucleation layer (NL) grown by molecular …

US10873395B2 - Smart laser light for communication - Google Patents US10873395B2 - Smart
laser light for communication - Google Patents Smart laser light for communication Download …

FOXXZZGDIAQPQI-XKNYDFJKSA-N (3S)-3-amino-4-[(2S)-2-[[(2S)-1-[[(1S)-1-carboxy-2-
hydroxyethyl] amino]-3-hydroxy-1-oxopropan-2-yl] carbamoyl] pyrrolidin-1-yl]-4-oxobutanoic …