Ternary logic has been investigated for several years as it can provide substantial
advantages in reducing the complexity of operations and the number of interconnects. On …

Smaller, lighter, and cost-effective satellite design is a major field of research today. Since
such satellites are equipped with limited resources, there is a huge demand for low-power …

In this paper, a single-ended, dual port, 1R1 W seven transistor-based static random access
memory bit cell is presented. The cell is designed based on a detailed review of various pre …

As technology scaling down, the sensitivity of SRAM cells to radiation-induced Single Event
Upsets (SEUs) increases, and Single Event Multiple Node Upsets (SEMNUs) due to charge …

The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction
modulation is presented and evaluated. The gate metal workfunction is linearly modulated …

SRAM cells are widely used to design memory blocks of, eg, caches, register files, and
translation lookaside buffers. Depending on the SRAM application, the design requirements …

This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel
field effect transistor (DG TFET). The mitigation technique for the data recovery after the …

The number of memory faults operating in radiation environments increases with the
electronic device miniaturization. One-dimensional (1D) Error Correction Codes (ECCs) are …

Fin field‐effect transistors (FinFETs) are replacing the traditional planar metal–oxide–
semiconductor FETs (MOSFETs) because of superior capability in controlling short channel …

In Space applications, the scaling of transistors has made integrated circuits (ICs) more
susceptible to soft errors, caused by radiation strikes. When a soft error causes a bit flip in a …