The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Hexagonal boron nitride: Epitaxial growth and device applications
As a newest family member of the III-nitrides, BN is considered amongst the remaining
frontiers in wide energy bandgap semiconductors with potentials for technologically …
frontiers in wide energy bandgap semiconductors with potentials for technologically …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
III‐Nitride micro‐LEDs for efficient emissive displays
JJ Wierer Jr, N Tansu - Laser & Photonics Reviews, 2019 - Wiley Online Library
Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …
efficiency, and large color gamut, are of great interest for applications such as watches …
Effect of dislocation density on efficiency droop in GaInN∕ GaN light-emitting diodes
Measurements of light-output power versus current are performed for Ga In N∕ Ga N light-
emitting diodes grown on GaN-on-sapphire templates with different threading dislocation …
emitting diodes grown on GaN-on-sapphire templates with different threading dislocation …
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong… - ECS Journal of Solid …, 2016 - iopscience.iop.org
Abstract" Ultra" wide-bandgap semiconductors are an emerging class of materials with
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN
multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different …
multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different …
InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range
High-efficiency InGaN light-emitting diodes (LEDs) in the" green gap" range were fabricated
on c-face sapphire (0001) substrates. Optical properties were enhanced by band …
on c-face sapphire (0001) substrates. Optical properties were enhanced by band …
Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation
H Tao, S Xu, J Zhang, H Su, Y Gao, Y Zhang… - Optics …, 2023 - opg.optica.org
Hetero-epitaxial growth of GaN often leads to high density of threading dislocations, which
poses a significant challenge to the promotion of the performance of GaN-based devices. In …
poses a significant challenge to the promotion of the performance of GaN-based devices. In …
[HTML][HTML] High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical
vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD …
vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD …