Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect
A compact Lambert W function-based model is proposed to analyze the drain current of
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
Single event performance of FED based SRAMs using numerical simulation
S PanneerSelvam, SK Pal, PV Chandramani… - Microelectronics …, 2023 - Elsevier
In this work, single event performance of field effect diode (FED) devices have been
investigated. Three variations of FED structures have been taken up for the study, and they …
investigated. Three variations of FED structures have been taken up for the study, and they …
A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor
This work demonstrates the reliability-aware analysis of the Junctionless negative
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
Modeling and analysis of gate-induced drain leakage current in negative capacitance junctionless FinFET
The gate-induced drain leakage (GIDL) current is one of the important short channel effects.
It is very significant to study the GIDL current (I GIDL) in negative capacitance-based FETs …
It is very significant to study the GIDL current (I GIDL) in negative capacitance-based FETs …
Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device
This paper presents a simulation study on a 12 nm Gate-all-around n-type Metal Oxide
Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and …
Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and …
Design of a 30 nm Germanium FinFET by Parameter Optimization
G Mogosetso, C Lebekwe… - Advanced Engineering …, 2022 - Trans Tech Publ
Germanium (Ge) is envisioned as a suitable channel candidate for field-effect transistors
(FET). Properties of Ge such as high carrier mobility, compatibility with Si and adaptability …
(FET). Properties of Ge such as high carrier mobility, compatibility with Si and adaptability …
Study of Impact of Channel Grading on 14nm Double Gate Finfet Performance
MAP Mandke, MRS Rane… - 2021 International …, 2021 - ieeexplore.ieee.org
FinFETs are well in demand due to their superiority in suppressing short channel effects
beyond 45nm planar technology node. However, as the performance of FinFET is observed …
beyond 45nm planar technology node. However, as the performance of FinFET is observed …