Review of performance metrics of spin qubits in gated semiconducting nanostructures

P Stano, D Loss - Nature Reviews Physics, 2022 - nature.com
Abstract This Technical Review collects values of selected performance characteristics of
semiconductor spin qubits defined in electrically controlled nanostructures. The …

Semiconductor quantum computation

X Zhang, HO Li, G Cao, M Xiao, GC Guo… - National Science …, 2019 - academic.oup.com
Semiconductors, a significant type of material in the information era, are becoming more and
more powerful in the field of quantum information. In recent decades, semiconductor …

A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics

F Jazaeri, A Beckers, A Tajalli… - 2019 MIXDES-26th …, 2019 - ieeexplore.ieee.org
Quantum computing (QC) has already entered the industrial landscape and several
multinational corporations have initiated their own research efforts. So far, many of these …

Quantum computing: fundamentals, implementations and applications

HA Bhat, FA Khanday, BK Kaushik… - IEEE Open Journal …, 2022 - ieeexplore.ieee.org
Quantum Computing is a technology, which promises to overcome the drawbacks of
conventional CMOS technology for high density and high performance applications. Its …

Impact of classical control electronics on qubit fidelity

JPG van Dijk, E Kawakami, RN Schouten… - Physical Review …, 2019 - APS
Quantum processors rely on classical electronic controllers to manipulate and read out the
state of quantum bits (qubits). As the performance of the quantum processor improves …

[HTML][HTML] Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

HC Han, F Jazaeri, A D'Amico, Z Zhao, S Lehmann… - Solid-State …, 2022 - Elsevier
This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology
down to deep cryogenic temperature, ie, 2.95 K. The impact of the back-gate voltage (V …

Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits

Y Liu, KP Gradwohl, CH Lu, T Remmele… - Journal of Applied …, 2022 - pubs.aip.org
We study the critical thickness for the plastic relaxation of the Si quantum well layer
embedded in a SiGe/Si/SiGe heterostructure for qubits by plan-view transmission electron …

Cryogenic characterization of 28-nm FD-SOI ring oscillators with energy efficiency optimization

H Bohuslavskyi, S Barraud, V Barral… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Extensive electrical characterization of ring oscillators (ROs) made in high-κ metal gate 28-
nm fully depleted silicon-on-insulator technology is presented for a set of temperatures …

Conditional dispersive readout of a CMOS single-electron memory cell

S Schaal, S Barraud, JJL Morton… - Physical Review Applied, 2018 - APS
Quantum computers require interfaces with classical electronics for efficient qubit control,
measurement, and fast data processing. Fabricating the qubit and the classical control layer …

[HTML][HTML] Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

J Park, Y Ahn, JA Tilka, KC Sampson, DE Savage… - APL Materials, 2016 - pubs.aip.org
Disorder in the potential-energy landscape presents a major obstacle to the more rapid
development of semiconductor quantum device technologies. We report a large-magnitude …