Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
This paper explores non-volatile cache memories implemented by spin-transfer torque
magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular …
magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular …
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
This paper investigates the impact of thermal stability relaxation in double-barrier magnetic
tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access …
tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access …
Efficiency of double-barrier magnetic tunnel junction-based digital eNVM array for neuro-inspired computing
This brief deals with the impact of spin-transfer torque magnetic random access memory
(STT-MRAM) cell based on double-barrier magnetic tunnel junction (DMTJ) on the …
(STT-MRAM) cell based on double-barrier magnetic tunnel junction (DMTJ) on the …
Reconfigurable CMOS/STT-MTJ non-volatile circuit for logic-in-memory applications
The unique properties of spin-transfer torque magnetic tunnel junctions (STT-MTJs) have led
to promising designs for logic and memory applications. Additionally, STT-MTJ based …
to promising designs for logic and memory applications. Additionally, STT-MTJ based …
Influence of physical and material parameters on switching current density in perpendicular STT-MTJ: a micromagnetic study
A Shaw, VK Joshi - Journal of Physics Communications, 2024 - iopscience.iop.org
Switching in magnetic tunnel junctions (MTJs) is considered to be coherent according to the
macrospin model but above a critical characteristic length (R c) this process becomes …
macrospin model but above a critical characteristic length (R c) this process becomes …
DMTJ-based non-volatile ternary content addressable memory for energy-efficient high-performance systems
This paper explores performance of non-volatile ternary content addressable memories (NV-
TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively …
TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively …
Voltage and technology scaling of DMTJ-based STT-MRAMs for energy-efficient embedded memories
This work presents energy advantages allowed by the technology and voltage scaling of
spin-transfer torque mag-netic random access memories (STT-MRAMs) based on perpen …
spin-transfer torque mag-netic random access memories (STT-MRAMs) based on perpen …
Exploiting TFET-based technology for energy-efficient STT-MRAM cells
SS Pérez, A Bedoya, LM Prócel… - International Journal of …, 2023 - content.iospress.com
Spin-transfer torque magnetic random-access memory (STT-MRAM) has been
demonstrated to be a leading candidate for on-chip memory technology. In this work, double …
demonstrated to be a leading candidate for on-chip memory technology. In this work, double …
STT-MRAM Technology For Energy-Efficient Cryogenic Memory Applications
This work explores non-volatile (NV) embedded memories implemented by spin-transfer
torque magnetic random access memories (STT-MRAMs). Our designs are based on state …
torque magnetic random access memories (STT-MRAMs). Our designs are based on state …
Micromagnetic modeling for the design of spintronic sensors and logic gates devices
F Cutugno - 2023 - tesidottorato.depositolegale.it
Micromagnetic modeling is a powerful approach that allows to study, design and optimize
spintronic devices in an affordable, reliable and relatively quick way. For the next generation …
spintronic devices in an affordable, reliable and relatively quick way. For the next generation …