Doped nanocrystalline silicon (nc-Si: H) thin films offer improved carrier transport
characteristics and reduced parasitic absorption compared to amorphous silicon (a-Si: H) …

Hydrogenated amorphous and nanocrystalline silicon films manufactured by plasma
deposition techniques are used widely in electronic and optoelectronic devices,. The …

The growth of microcrystalline silicon prepared by plasma-enhanced chemical vapour
deposition depends on the deposition conditions and yields films with variable content of …

Excellent surface passivation induced by (i) a‐Si: H is critical to achieve high‐efficiency
silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell …

In the past 2 years major advances have been made in the understanding of silane–
hydrogen plasmas. In particular, the control of the formation of clusters and even crystallites …

The dielectric functions of amorphous and polymorphous silicon films prepared under
various plasma conditions have been deduced from UV-visible spectroscopic ellipsometry …

N-type hydrogenated nanocrystalline silicon oxide (nc-SiO x: H) is potential to enhance the
performance of silicon heterojunction solar cells, but the raised plasma damage on …

Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a
front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous high V OC …

The plasma processes and growth reactions involved in the deposition of amorphous,
polymorphous and microcrystalline silicon thin films are reviewed. The reference being a-Si …

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped
amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline …