Metallic-like transition metal-based nanostructures (MLTMNs) has recently arisen as robust
and highly efficient materials for energy storage and conversion. Owning to extraordinary …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …

GaN single crystals were prepared in a sealed stainless steel tube at 600− 800° C from Ga
using a Na flux and N2 from the thermal decomposition of sodium azide, NaN3. The …

We have investigated the lattice dynamics of a wurtzite GaN single crystal by inelastic x-ray
scattering. Several dispersion branches and phonons at high-symmetry points have been …

The technology of GaN is very advanced due to excellent figures of merit relevant for key
applications like LEDs or high-power–high-frequency transistors. Nevertheless, some …

Bulk single crystals of GaN and heteroepitaxial GaN layers were subjected to free-etching
and mechano-chemical polishing in aqueous solutions (10-1N) of KOH and NaOH. It has …

In this paper, thermodynamical properties of AIN, GaN and InN are considered. It is shown
that significant differences in melting conditions, thermal stability and solubilities in liquid …