A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

We present Ge rib waveguide devices fabricated on a Ge-on-insulator (GeOI) wafer as a
proof-of-concept Ge mid-infrared photonics platform. Numerical analysis revealed that the …

CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

Material and lattice defect properties of silicon and germanium relevant for device
processing are discussed and compared with respect to their impact on crystal pulling …

Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

The growing interest in nanoelectronics and photonics, combined with the development of
new germanium-based devices, provide the impetus to develop new doping methods …

After a short introduction we will highlight processing issues (setup, comparison of
annealing methods, relevant requirements for annealing due to doping, diffusion, activation …

Amorphous Ge and its recrystallization are investigated by molecular-dynamics simulations
using a Stillinger-Weber-type interatomic potential. Unlike previously used parametrizations …