Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …

To widen the practical application of supercapacitors in acid electrolyte,
carbon/molybdenum nitride (C/Mo x N) nanofibers are synthesized via combination of …

Atomic layer deposition (ALD) is not just a thin film deposition technology limited to the
semiconductor IC industries to grow high-k gate dielectric or a Cu diffusion barrier layer. In …

The chemical vapor deposition of refractory metal nitrides requires volatile precursors and
has previously been achieved by using metal complexes containing a variety of imide …

The bis (tert-butylimido)-molybdenum (VI) framework has been used successfully in the
design of vapor-phase precursors for molybdenum-containing thin films, so understanding …

The vapor deposition of many molybdenum-containing films relies on the delivery of volatile
compounds with the general bis (tert-butylimido) molybdenum (VI) framework, both in atomic …

Molybdenum carbonitride films were deposited using plasma enhanced atomic layer
deposition techniques with (t BuN) 2 (NMe 2) 2 Mo at temperatures ranging from 80 to 300 …