As a typical metal oxide semiconductor, ZnO has been investigated deeply for the
application of gas sensing materials. In this study, an ultrahigh sensitive and selective NO 2 …

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)—structures
composed of two electrodes separated by an ultrathin ferroelectric barrier—offers new …

As an n-type metal oxide semiconductor (MOS), vanadium pentoxide (V 2 O 5) has shown
great potential in gas sensing, especially for the detection of NO 2. Herein, a highly sensitive …

The recent focus of the scientific community on multiscale computer modeling techniques of
nano-engineered materials stems from the desire to develop more realistic methodologies …

Solvated electrons were first discovered in solutions of metals in liquid ammonia. The
physical and chemical properties of these species have been studied extensively for many …

While doped nanoscale (sub-100 nm) polyaniline films have shown interesting behavior
with respect to electrical conductivities and thermal sensing, there has been scant attention …

The nature of hydrogen bonding in condensed ammonia phases, liquid and crystalline
ammonia has been a topic of much investigation. Here, we use quantum molecular …

A chromophore based on tricyanofuran (TCF) with a hydrazone (H) recognition moiety was
developed. Its molecular‐switching performance is reversible and has differential sensitivity …

Porous tin oxide films were prepared via an electrophoretic deposition process and their
sensing response toward nitrogen gas (4.1–100ppm) at 25–120° C were investigated. The …

Abstract The Free Energy Gradient method is used to obtain the π–π* excited state structure
of uracil in aqueous environment. The geometry calculations are made at the CASSCF level …