[PDF][PDF] STRUCTURAL PROPERTIES AND IV, CV CHARACTERISTIC FOR a-Ge: In/c-Si HETEROJUNCTION
MT AL-Azawi, HK Al-Lamy, RA AL-Ansari - Journal of Electron Devices, 2014 - Citeseer
Ge: In films with thickness (1µm) have been deposited by thermal evaporation technique on
glass substrate and c-Si (111) wafer at room temperature, under vacuum of 10-5 mbar with …
glass substrate and c-Si (111) wafer at room temperature, under vacuum of 10-5 mbar with …