Experimental investigations on the surface-driven capillary flow of aqueous microparticle suspensions in the microfluidic laboratory-on-a-chip systems

S Mukhopadhyay - Surface Review and Letters, 2017 - World Scientific
In this work, total 1592 individual leakage-free polymethylmethacrylate (PMMA) microfluidic
devices as laboratory-on-a-chip systems are fabricated by maskless lithography, hot …

[PDF][PDF] Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs

S Kalita, LT Chanu… - Journal of Microelectronics …, 2017 - researchgate.net
In this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN
single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium …

Studies on the quantum well heterostructure for gallium nitride based high electron mobility transistors

S Kalita - 2019 - shodhganga.inflibnet.ac.in
In this thesis, a different high electron mobility transistor (HEMT) structures are designed
using gallium nitride (GaN). Also, the electrical characteristics and conduction band …

[引用][C] Report on the effects of mole fraction, doping concentration, gate length and nano-layer thickness to control the device engineering in the Nanoelectronic AlGaN …

S Mukhopadhyay, S Kalita - Nano Trends, 2017

[引用][C] Report on the novel electrical characteristics of microelectronic high electron mobility transistors to establish a low-cost microelectronics laboratory in the …

S Mukhopadhyay - Journal of Semiconductor Devices and Circuits, 2017

[引用][C] Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications

S Kalita, S Mukhopadhyay - Journal of Semiconductor Devices and Circuits, 2016

[引用][C] Variations of Source Current in the Double-Heterojunction HEMTs

S Kalita, S Mukhopadhyay - Journal of Semiconductor Devices and Circuits, 2016

[引用][C] Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer

S Kalita, S Mukhopadhyay - Journal of Microelectronics and Solid State Devices, 2016

[引用][C] Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to …

S Mukhopadhyay, S Kalita - Research & Reviews: A Journal of Embedded System …, 2017

[引用][C] Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer

S Mukhopadhyay, S Kalita - Journal of Semiconductor Devices and Circuits, 2017