This article centers its attention on the phenomenon of electrostatics, linearity, analogue,
and RF performance of a 0.5 μm×(2× 100) μm double heterojunction AlGaAs/InGaAs/GaAs …

This work investigates the performance of silicon-on-insulator (SOI) based vertical
heterojunction tunnel FET with magnesium silicide (Mg 2 Si) as source material (Mg 2 Si …

In this paper, a novel structure of Double Gate Schottky Barrier Tunnel Field Effect Transistor
(DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) …

This study focuses on the Electrostatic, linearity, and analogue/RF parameters of a single
heterojunction AlGaAs/GaAs-based high electron mobility transistor (HEMT). The device …

In this paper, the impact of vertical channel epilayer thickness (T epi) of a unique U-TFET
has been investigated in the RF domain along with its linearity aspect. Then, a glance has …

This study comprises a simulated assessment of the influence of temperature on transfer
characteristics of SiGe source-based Epitaxial layer tunnel field effect transistor (SiGe …

This research exclusively presents a short-channel III–V heterojunction tunnel field-effect
transistor (TFET) featuring a high-κ gate dielectric. The study includes a comprehensive …

Recently, the doping‐less tunnel FET has gained popularity due to its lower process
complexity than conventional TFETs with heavily doped source and drain regions. In this …

This article presented a thorough investigation of direct current (DC), analog/radio frequency
(RF), and linearity performance of a proposed Ge‐source double gate planner Si‐tunnel …

Metal–oxide–semiconductor field-effect transistor (MOSFET) faces the major problem of
being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions …