Electronic noise—From advanced materials to quantum technologies
The science of electronic fluctuations and noise has been one of the most important
branches of applied physics. The investigation of noise is essential for the understanding of …
branches of applied physics. The investigation of noise is essential for the understanding of …
Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology
Ferroelectric transistors are considered promising for next-generation 3D NAND technology
due to their lower power consumption and faster operation compared to conventional …
due to their lower power consumption and faster operation compared to conventional …
Ferroelectric transistor with grooved structure for reliable multi-level characteristics
Ferroelectric transistors that use hafnia-based ferroelectric materials are considered as a
promising candidate for next-generation memory devices due to their fast operation speed …
promising candidate for next-generation memory devices due to their fast operation speed …
The identification of traps in HfO2-based FeFET with SiON as an interlayer using current transient method
L Zhou, J Cui, X Wang, F Tian, H Zhu… - Semiconductor …, 2024 - iopscience.iop.org
This work investigates the current transient and trap characteristics of Si FeFET with HfZrO
ferroelectric and SiON as the interfacial layer. The trap characteristics in the …
ferroelectric and SiON as the interfacial layer. The trap characteristics in the …
Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices
Hafnia-based ferroelectric thin-film transistors (FeTFTs) hold promise for next-generation
memory applications like three-dimensional (3D) NAND flash memory, owing to their low …
memory applications like three-dimensional (3D) NAND flash memory, owing to their low …