A phased-array transmitter (TX) for multi-Gb/s non-line-of-sight links in the four frequency
channels of the IEEE 802.15. 3c standard (58.32 to 64.8 GHz) is fully integrated in a 0.12-μm …

A 60 GHz wideband power amplifier (PA) is fabricated in a standard CMOS SOI 65 nm
process. The PA is based on two cascode stages. Input, output and inter-stage matching use …

Full-duplex (FD) relaying is a promising solution for fifth generation (5G) wireless
communications due to its potential to provide high spectral efficiency (SE) transmission …

Energy-efficiency (EE)-oriented green communication design is an important issue at 60
GHz due to high power consumption of devices working at such a high frequency. In this …

This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE), a peak
power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB) of 14 dBm. Its measured …

This paper presents a single-stage V-band quadrupler in 0.25-μm SiGe BiCMOS technology
with an outstanding 36% bandwidth from 52 to 75 GHz. The quadrupler generates-10 dBm …

Single stage cascode power amplifier for 60 GHz band is presented in this letter. Modeling
methodology, together with effects of (im) proper local interconnect modeling on achievable …

A fully integrated 2 stage K-band power amplifier is designed, fabricated and measured. The
amplifier is realized utilizing standard 0.18 μm CMOS process. A novel simplified matching …

In this paper, design guidelines are provided to improve the thermal stability of three-and
four-finger bipolar transistors. Experiments and simulations are first performed on silicon-on …

This paper presents design methodology and characterization of a 60 GHz class-A power
amplifier and reviews in detail its design procedure, which requires only DC and small …