Method of manufacturing a magnetoresistive random access memory device
W Kim, K Deok-Hyeon, WJ Kim, WC Lim… - US Patent …, 2020 - Google Patents
A method of manufacturing an MRAM device, the method including forming a first magnetic
layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that …
layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that …
Magnetic tunneling junction device and memory device including the same
KIM Kwangseok, S Park, S Lee, N Hase - US Patent 12,052,930, 2024 - Google Patents
Provided are a magnetic tunneling junction device having more stable perpendicular
magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device …
magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device …
Magnetic memory device and method for fabricating the same
HJ Shin, SH Park, SC Oh, KW Kim, HW Seo - US Patent 11,735,241, 2023 - Google Patents
A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer
between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel …
between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel …
Magnetoresistive random access memory (MRAM) device
W Kim, K Deok-Hyeon, WJ Kim, WC Lim… - US Patent …, 2023 - Google Patents
(57) ABSTRACT Related US Application Data A method of manufacturing an MRAM device,
the method.. including forming a first magnetic layer on a substrate;(63) Continuation of …
the method.. including forming a first magnetic layer on a substrate;(63) Continuation of …
Oxide interlayers containing glass-forming agents
J JEONG, MT Krounbi, X Tang - US Patent 11,251,366, 2022 - Google Patents
(57) ABSTRACT A magnetic junction usable in a magnetic device is described. The
magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide …
magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide …
Magnetoresistive random access memory (MRAM) device
W Kim, K Deok-Hyeon, WJ Kim, WC Lim… - US Patent …, 2021 - Google Patents
A method of manufacturing an MRAM device, the method including forming a first magnetic
layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that …
layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that …
Magnetic memory device
Y Kato, S Oikawa, H Yoda - US Patent 11,017,826, 2021 - Google Patents
According to one embodiment, a magnetic memory device includes a conductive member, a
first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The …
first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The …