Methods of forming semiconductor patterns including reduced dislocation defects and
devices formed using Such methods are provided. The methods may include forming an …

(57) ABSTRACT A semiconductor device includes a Substrate, an insulating layer disposed
on the Substrate and having a trench exposing a Surface portion of the Substrate, and a …

Abstract Systems and methods herein relate to the fabrication of a single-crystal flexible
semiconductor template that may be attached to a semiconductor device. The template …

The present invention relates generally to semiconductor devices and more particularly, to a
structure and method of forming a fin using double trench epitaxy. The fin may be composed …

An electrical device comprising a base semiconductor layer of a silicon including material; a
dielectric layer present on the base semiconductor layer; a first III-V semiconductor material …

Methods and structures are provided for formation of devices, eg, solar cells, on substrates
including, eg, lat tice-mismatched materials, by the use of aspect ratio trap ping and epitaxial …

The present invention provides a silicon-compatible compound junctionless field effect
transistor enabled to be compatible to a bulk silicon substrate for substituting an expensive …

A method of forming a semiconductor substrate including a type III-V semiconductor material
directly on a dielectric material that includes forming a trench in a dielectric layer, and …

(57) ABSTRACT A complementary metal oxide semiconductor (CMOS) device includes an n-
type first transistor on a silicon Substrate, the n-type first transistor including a Group III-V …

Method for fabricating a semiconductor structure. The method includes: providing a
crystalline silicon Substrate; defining an opening in a dielectric layer on the crystalline …