A 2 in. active‐matrix light‐emitting diode (AMLED) display by integration of the micro‐LED
onto the oxide thin‐film transistor (TFT) backplane using flip chip bonding is reported. A blue …

The effect of active layer (amorphous indium–gallium–zinc oxide, a‐IGZO) splitting on the
performances of back‐channel‐etched (BCE) and etch‐stopper (ES) thin‐film transistors …

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 C |
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …

Amorphous InGaZnO (a-IGZO) UV photodetectors with a metal-semiconductor-metal
structure were fabricated on polyethylene terephthalate (PET) substrates, and the effects of …

Both fluorination and oxidation have been employed to passivate defects in indium-gallium-
zinc oxide thin-film transistors, leading to enhanced device attributes. It is presently reported …

We report the effect of doping fluorine in the offset region on the performance of coplanar
amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4 …

Recent advancements in resistive random-access memory devices have led to their
applications in neuromorphic computing by leveraging their synapse-emulating and energy …

The electrical properties, carrier generation mechanism, and origin of subgap states in Ar-
and He-plasma-treated In–Ga–Zn–O (IGZO) films were investigated. The incident ion energy …

A new device structure of oxide thin‐film transistor (TFT) having lower overlap capacitance
without scarifying the drain current is proposed. This can be used for high‐speed circuits …

The increasing demand for energy-efficient data processing leads to a growing interest in
neuromorphic computing that aims to emulate cerebral functions. This approach offers cost …