GaN nanostructures have been extensively studied due to their important properties and
applications in many fields. The recent synthesis and uses of these nanostructures have …

In recent years, nanostructured substances are very interesting compared to their bulk
compared to their different physical features [1, 2]. Gallium nitride (GaN) Nanoparticles (NPs) …

In this study, ZnO nanofibers (ZnO NFs) were successfully grown for the first time on Teflon
substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were …

This paper presents a review of recent advances of GaN based nanostructured materials
and devices. GaN has gained substantial interest in the research area of wide band gap …

Nanostructure thin films of gallium nitride (GaN) were prepared and deposited by using
pulse laser deposition (PLD) technique at three different laser wavelengths (1064, 532 and …

This paper presents a review of the recent advances of GaN based nanowires sensors. GaN
has gained substantial interest in the research area of wide band gap semiconductors due …

This paper reports the performance of a proposed GaN heterojunction pin photodiode with a
p-type In 0.1 Ga 0.9 N layer. The simulation results show that, compared with the GaN …

In the present work, we report on the fabrication and detailed electrical characterization of p-
Si/n-Cu x In 1− x O heterojunction prepared via the deposition of nanocrystalline Cu x In 1− x …

In the present work, we report the photoresponse characteristics of the hybrid heterojunction
consisting of polypyrrole (PPy) sandwiched between p-Si substrate and n-Cu x In 1− x O …

Gallium nitride (GaN) is a promising wide-band gap (Eg= 3.4 eV) semiconductor for blue-
light-emitting diodes, laser diodes, high-speed field-effect-transistors, and high temperature …