Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing
Ferroelectric (FE) materials are key to advancing electronic devices owing to their non‐
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …
Ferroelectric tunnel junctions: promise, achievements and challenges
SH Park, HJ Lee, MH Park, J Kim… - Journal of Physics D …, 2024 - iopscience.iop.org
Ferroelectric tunnel junctions (FTJs) have been the subject of ongoing research interest due
to its fast operation based on the spontaneous polarization direction of ultrathin ferroelectrics …
to its fast operation based on the spontaneous polarization direction of ultrathin ferroelectrics …
Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity
This study comprehensively analyzes of the influence of bottom electrode crystallinity on the
stochastic noise in ferroelectric tunnel junctions (FTJs). We perform a comparative analysis …
stochastic noise in ferroelectric tunnel junctions (FTJs). We perform a comparative analysis …
Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation
A Wang, R Chen, Y Yun, J Xu… - Advanced Functional …, 2024 - Wiley Online Library
Ferroelectrics are considered to be promising candidates for highly energy‐efficient
electronic devices in future information technologies owing to their nonvolatile and low …
electronic devices in future information technologies owing to their nonvolatile and low …
Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management
The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting
crystals faces challenges due to diminished gate electrostatics and increased charge carrier …
crystals faces challenges due to diminished gate electrostatics and increased charge carrier …
Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications
This study investigates the stochastic behavior of random telegraph noise (RTN) in
ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications …
ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications …
Examination of Ferroelectric Domain Dynamics in HZO under Endurance Cycling Stress
We investigate domain wall (DW) movement in hafnium zirconium oxide (HZO) under
various temperature () and cycling stresses. It is demonstrated that cycling stress distinctly …
various temperature () and cycling stresses. It is demonstrated that cycling stress distinctly …
Hybrid ferroelectric tunnel junctions: State-of-the-art, challenges and opportunities
Ferroelectric tunnel junctions (FTJs) harness the unique combination of ferroelectricity and
quantum tunneling, and thus herald new opportunities in next-generation nonvolatile …
quantum tunneling, and thus herald new opportunities in next-generation nonvolatile …