MeF-RAM: A new non-volatile cache memory based on magneto-electric FET
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers
intriguing characteristics for high-speed and low-power design in both logic and memory …
intriguing characteristics for high-speed and low-power design in both logic and memory …
MERAM: Non-volatile cache memory based on magneto-electric FETs
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers
intriguing characteristics for high speed and low-power design in both logic and memory …
intriguing characteristics for high speed and low-power design in both logic and memory …
Apparatus with selectable majority gate and combinational logic gate outputs
S Manipatruni, R Rios, I Odinaka, R Menezes… - US Patent …, 2024 - Google Patents
A new class of logic gates are presented that use non-linear polar material. The logic gates
include multi-input majority gates and threshold gates. Input signals in the form of analog …
include multi-input majority gates and threshold gates. Input signals in the form of analog …
Magnetoelectric inverter
2023-02-04 Assigned to BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA
reassignment BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA ASSIGNMENT …
reassignment BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA ASSIGNMENT …
Magnetoelectric majority gate device
A magneto-electric (ME) majority gate device includes a conducting device and a plurality of
ME transistors coupled to the conducting device. In one implementation, the plurality of ME …
ME transistors coupled to the conducting device. In one implementation, the plurality of ME …
Magnetoelectric XNOR logic gate device
Abstract A magneto-electric (ME) XNOR logic gate device includes a conducting device; and
a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a …
a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a …