Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Recent advances in 2D material theory, synthesis, properties, and applications
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of
emergent 2D systems. Here, we review recent advances in the theory, synthesis …
emergent 2D systems. Here, we review recent advances in the theory, synthesis …
Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides
Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …
Ferroelectrics-integrated two-dimensional devices toward next-generation electronics
Ferroelectric materials play an important role in a wide spectrum of semiconductor
technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …
technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …
Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing
Conventional artificial intelligence (AI) machine vision technology, based on the von
Neumann architecture, uses separate sensing, computing, and storage units to process …
Neumann architecture, uses separate sensing, computing, and storage units to process …
Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing
Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …
An epitaxial ferroelectric ScAlN/GaN heterostructure memory
Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …
attracted growing interest due to its promising applications in data storage and in‐memory …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Ferroelectric behavior of sputter deposited Al0. 72Sc0. 28N approaching 5 nm thickness
JX Zheng, MMA Fiagbenu, G Esteves… - Applied Physics …, 2023 - pubs.aip.org
Ferroelectric Al 1− x Sc x N has raised much interest in recent years due to its unique
ferroelectric properties and complementary metal oxide semiconductor back-end-of-line …
ferroelectric properties and complementary metal oxide semiconductor back-end-of-line …
Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy
We report on the ferroelectric properties of single-phase wurtzite ScGaN grown on GaN by
plasma-assisted molecular beam epitaxy. Distinct ferroelectric switching behavior was …
plasma-assisted molecular beam epitaxy. Distinct ferroelectric switching behavior was …