Wurtzite and fluorite ferroelectric materials for electronic memory

KH Kim, I Karpov, RH Olsson III, D Jariwala - Nature Nanotechnology, 2023 - nature.com
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Recent advances in 2D material theory, synthesis, properties, and applications

YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi… - ACS …, 2023 - ACS Publications
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of
emergent 2D systems. Here, we review recent advances in the theory, synthesis …

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

L Rogée, L Wang, Y Zhang, S Cai, P Wang… - Science, 2022 - science.org
Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …

Ferroelectrics-integrated two-dimensional devices toward next-generation electronics

T Jin, J Mao, J Gao, C Han, KP Loh, ATS Wee… - ACS nano, 2022 - ACS Publications
Ferroelectric materials play an important role in a wide spectrum of semiconductor
technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …

Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

X Fu, T Li, B Cai, J Miao, GN Panin, X Ma… - Light: Science & …, 2023 - nature.com
Conventional artificial intelligence (AI) machine vision technology, based on the von
Neumann architecture, uses separate sensing, computing, and storage units to process …

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing

D Wang, P Wang, S Mondal, M Hu, Y Wu… - Advanced …, 2023 - Wiley Online Library
Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

An epitaxial ferroelectric ScAlN/GaN heterostructure memory

D Wang, P Wang, S Mondal, S Mohanty… - Advanced Electronic …, 2022 - Wiley Online Library
Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …

Dawn of nitride ferroelectric semiconductors: from materials to devices

P Wang, D Wang, S Mondal, M Hu… - Semiconductor Science …, 2023 - iopscience.iop.org
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Ferroelectric behavior of sputter deposited Al0. 72Sc0. 28N approaching 5 nm thickness

JX Zheng, MMA Fiagbenu, G Esteves… - Applied Physics …, 2023 - pubs.aip.org
Ferroelectric Al 1− x Sc x N has raised much interest in recent years due to its unique
ferroelectric properties and complementary metal oxide semiconductor back-end-of-line …

Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy

D Wang, P Wang, B Wang, Z Mi - Applied Physics Letters, 2021 - pubs.aip.org
We report on the ferroelectric properties of single-phase wurtzite ScGaN grown on GaN by
plasma-assisted molecular beam epitaxy. Distinct ferroelectric switching behavior was …