257/E33. 072 (57) ABSTRACT A method of manufacturing LED devices using Substrate
scale processing includes providing a Substrate member hav ing a surface region. A …

A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal
seed plates are suspended in a rack, placed in a large diameter autoclave or internally …

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an
added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered …

An improved capsule for processing materials or growing crystals in Supercritical fluids. The
capsule is scalable up to very large Volumes and is cost effective according to a pre ferred …

(73) Assignee: Soraa, Inc., Goleta, CA (US)(57) ABSTRACT Techniques are described for
transmitting electromagnetic (21) Appl. No.: 13/014,622 radiation from LED devices …

Techniques for processing materials in supercritical fluids including processing in a capsule
disposed within a high-pressure apparatus enclosure are disclosed. The disclosed …

A gallium and nitrogen containing substrate structure includes a handle substrate member
having a first surface and a second surface and a transferred thickness of gallium and …

US8729559B2 - Method of making bulk InGaN substrates and devices thereon - Google
Patents US8729559B2 - Method of making bulk InGaN substrates and devices thereon …

A method of operating a high pressure system for growth of gallium nitride containing
materials. The method comprises providing a high pressure apparatus comprising a growth …

An improved high pressure apparatus and methods for processing supercritical fluids is
described. The apparatus includes a capsule, a heater, and at least one ceramic ring …