Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by
plasma assisted molecular beam epitaxy on Ag (111) single crystals. Electron diffraction and …

Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …

Ten samples of crystalline aluminum nitride (AlN) film were deposited on sapphire and
silicon substrates by a plasma source molecular beam method. The samples were analyzed …

We have investigated the relationship between improved electrical properties of Al 2 O
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …

The science of catalysis has a direct impact on the world economy and the energy
environment that positively affects the environmental ecosystem of our universe. Any …

Spectrally selective TiAlN/AlON tandem absorbers were deposited on copper and stainless
steel substrates using a reactive DC/RF magnetron sputtering system. The compositions and …

The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …

In situ X-ray photoelectron spectroscopy and low energy electron diffraction are performed to
study the formation of a crystalline oxide on the AlGaN surface. The oxidation of the AlGaN …

Titanium nitride (TiN x) thin films were grown by radio-frequency (RF) magnetron sputter
deposition by varying the nitrogen content in the reactive gas mixture over a wide range. The …

We have investigated the effects of thin native oxide layers on the AlGaN surface on the DC
characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). After HEMT …