Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …

In this letter, we investigate by means of experimental results and TCAD simulations the
threshold voltage instability due to OFF-state drain stress in p-GaN gate AlGaN/GaN-on-Si …

The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement
mode transistors are investigated using temperature-dependent dc gate current …

In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …

In this work, fast sweeping characterization with an extremely short relaxation time was used
to probe the V TH instability of p-GaN gate HEMTs. As the ID-VG sweeping time deceases …

The most commonly used memory cells, namely a 32-bit-bit read-only memory, a 1-bit 4-
transistor static random-access memory, D latch, and D flip-flop (DFF), were demonstrated …

In this study, we propose a technique to evaluate the transient threshold voltage behavior of
p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs). The threshold …

We present detailed ON-state gate current characterization of Schottky gate p-GaN capped
AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The …

In this work, the transient threshold voltage (recovery on Schottky-type-GaN Gate
AlGaN/GaN high-electron-mobility-transistors (HEMTs) is measured with a microsecond …