Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …

Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …

Magnetron sputter epitaxy (MSE) is a promising processing route for group-III nitride
semiconductors, with the potential to enable high-quality and low cost GaN growth for …

We demonstrated the low-temperature bonding of GaN and diamond substrates using wet
chemical treatments. The GaN and diamond surfaces treated with HCl and NH4OH/H2O2 …

Abstract Gallium Nitride (GaN) high electron mobility transistors (HEMTs) exhibit superior
electrical properties for power and radio frequency applications, but performance is …

Abstract Gallium oxide (Ga 2 O 3) and gallium nitride (GaN) are fourth-and third-generation
semiconductor materials, respectively. Their heterogeneous structure (lattice mismatch of …

This paper offers a wide‐operating range electric vehicle charger design by employing an
interleaved inductor–inductor–capacitor iL2C DC–DC converter. It uses two parallel L2C …

We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …

A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD),
electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and …

In recent years, gallium nitride (GaN) high electron mobility transistors (HEMTs) have come
to the forefront of the semiconductor industry because of their exceptional performance in …