Titanium dioxide is one of the most intensely studied oxides due to its interesting
electrochemical and photocatalytic properties and it is widely applied, for example in …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two
electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron …

Many inhomogeneous systems involve domains of well-de? ned phases se-rated by a
distinct interface. If they are driven out of equilibrium one phase will grow at the cost of the …

With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …

The defect structure in relaxed graded Ge/Ge x Si 1− x/Si structures grown on (001) exact
and (001) off-cut substrates using ultra-high vacuum chemical vapor deposition was …

We have used sensitive real-time measurements of film stress during Si 1-x Ge x molecular
beam epitaxy to examine strain relaxation due to coherent island formation, and to probe the …

The emerging field of strained-Si based nanomembranes is reviewed, including fabrication
techniques, strain-induced band structure engineering, electronic applications and three …

New capabilities of misfit dislocations for spatial manipulation of islands in Si 1− x Ge x/Si
heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island …

The morphology, stress, and composition distributions of the crosshatch pattern on a SiGe
film grown on a Si (001) substrate using a low-temperature Si buffer are studied by atomic …