Power cycling test methods for reliability assessment of power device modules in respect to temperature stress
UM Choi, F Blaabjerg… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …
power device modules in respect to temperature stress. From this, it is able to predict the …
Review on Failure Mechanism and Methodologies of IGBT Bonding Wire
Q Li, Y Li, H Fu, C Tu, B Xiao, F Xiao… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In the welding insulated gate bipolar transistor (IGBT) module, the module failure caused by
bonding wire failure accounts for about 70% of the total module failure. Therefore, it is …
bonding wire failure accounts for about 70% of the total module failure. Therefore, it is …
Lifetime estimation of discrete IGBT devices based on Gaussian process
Discrete package insulated gate bipolar transistor (IGBT) devices are a popular choice for
low-power converters. Although IGBT power modules used in high-power applications have …
low-power converters. Although IGBT power modules used in high-power applications have …
Validation of lifetime prediction of IGBT modules based on linear damage accumulation by means of superimposed power cycling tests
In this paper, the lifetime prediction of power device modules based on the linear damage
accumulation is studied in conjunction with simple mission profiles of converters …
accumulation is studied in conjunction with simple mission profiles of converters …
Lifting-off of Al bonding wires in IGBT modules under power cycling: failure mechanism and lifetime model
Y Huang, Y Jia, Y Luo, F Xiao… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Lifting-off of Al bonding wires is one common failure mode of insulated-gate bipolar
transistor (IGBT) modules during long-time operation. In the present work, the failure …
transistor (IGBT) modules during long-time operation. In the present work, the failure …
Modeling and characterization of frequency-domain thermal impedance for IGBT module through heat flow information
Frequency-domain modeling is a relatively new approach for thermal impedance description
of power semiconductor devices, and it has shown promising advantages to analyze the …
of power semiconductor devices, and it has shown promising advantages to analyze the …
Development of a high-gain step-up DC/DC power converter with magnetic coupling for low-voltage renewable energy
R Du, V Samavatian, M Samavatian, T Gono… - IEEE …, 2023 - ieeexplore.ieee.org
There exists an extensive range of applications for elevated gain DC/DC converters, as
numerous low-voltage resources are exploited for power supply. Therefore, this study …
numerous low-voltage resources are exploited for power supply. Therefore, this study …
Effect of sintering conditions on the mechanical strength of Cu-sintered joints for high-power applications
JW Yoon, JH Back - Materials, 2018 - mdpi.com
In this study, the feasibility of low-cost Cu-sintering technology for power electronics
packaging and the effect of sintering conditions on the bonding strength of the Cu-sintered …
packaging and the effect of sintering conditions on the bonding strength of the Cu-sintered …
Modeling and correlation of two thermal paths in frequency-domain thermal impedance model of power module
Based on the finding that the gain of heat flow inside a power semiconductor device
behaves as a low-pass filter (LPF) under the frequency domain, an advanced thermal model …
behaves as a low-pass filter (LPF) under the frequency domain, an advanced thermal model …
A simple plug-in circuit for IGBT gate drivers to monitor device aging: Toward smart gate drivers
A Simple Plug-In Circuit for IGBT Gate Drivers to Monitor Device Aging: Toward Smart Gate
Drivers Page 1 2329-9207/18©2018IEEE September 2018 z IEEE PowEr ElEctronIcs …
Drivers Page 1 2329-9207/18©2018IEEE September 2018 z IEEE PowEr ElEctronIcs …